Quantum Hall effect and von Klitzing constant

Author:

Semenchinskiy Sergey G.1

Affiliation:

1. Russian Research Institute for Metrological Service

Abstract

The current problem in the field of electrical measurements is considered in connection with the new definitions of SI units of physical quantities adopted by the 26th General Conference on Weights and Measures in November 2018 (France, Versailles), namely, the reproduction of an ohm based on the quantum Hall effect. The reasons for the introduction in 1988 of the Klitzing constant independent of the international system of units and its cancellation in 2018 are explained. The physical foundations of the quantum Hall effect are outlined. The main indirect and direct experiments that led to the creation of an ohm standard based on the quantum Hall effect, including those carried out at VNIIMS in 1982–1986, are analyzed. Using the example of these experiments, the identity of the values of the quantized resistance for samples prepared on the basis of inversion layers in silicon, gallium arsenide and in samples of a fundamentally new substance graphene is shown. Results on the use of graphene to create standards based on the quantum Hall effect for various industries and science based on the latest advances in its production are presented.

Publisher

FSUE VNIIMS All-Russian Research Institute of Metrological Service

Subject

General Medicine

Reference20 articles.

1. 16 November 2018: Historic day for metrology, available at: https://www.bipm.org/utils/common/pdf/CGPM-2018/Presentation-CGPM26-Klitzing.pdf (accessed: 02.12.2020).

2. Quinn T. J., Metrologia, 1989, vol. 26(1), pp. 69–74. https://doi.org/10.1088/0026-1394/26/1/006

3. K. v. Klitzing, Dorda G., and Pepper M., Physical Review Letters, 1980, vol. 45, no. 6, pp. 494–497. https://doi.org/10.1103/PhysRevLett.45.494

4. Semenchinskiy S. G., Ob elektricheskikh edinitsakh SI, Zakonodatel'naya i prikladnaya metrologiya, 2019, no. 2(159), pp. 7–9 (in Russian).

5. Semenchinskiy S. G., Elelman V. S., Polevoi tranzistor i postoyannaya tonkoi struktury, Priroda, 1982, no. 9, pp. 38–41 (in Russian).

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