Na+ Interaction with the Pore of Shaker B K+ Channels

Author:

Gómez-Lagunas Froylán12

Affiliation:

1. Departamento de Fisiología, Facultad de Medicina, UNAM, Universitaria, México City 04510, México

2. Departamento de Reconocimiento Molecular y Biologia Estructural, Instituto de Biotecnología, UNAM, Cuernavaca, Morelos 62250, México

Abstract

The Shaker B K+ conductance (GK) collapses (in a reversible manner) if the membrane is depolarized and then repolarized in, 0 K+, Na+-containing solutions (Gómez-Lagunas, F. 1997. J. Physiol. 499:3–15; Gómez-Lagunas, F. 1999. Biophys. J. 77:2988–2998). In this work, the role of Na+ ions in the collapse of GK in 0-K+ solutions, and in the behavior of the channels in low K+, was studied. The main findings are as follows. First, in 0-K+ solutions, the presence of Na+ ions is an important factor that speeds the collapse of GK. Second, external Na+ fosters the drop of GK by binding to a site with a Kd = 3.3 mM. External K+ competes, in a mutually exclusive manner, with Nao+ for binding to this site, with an estimated Kd = 80 μM. Third, NMG and choline are relatively inert regarding the stability of GK; fourth, with [Ko+] = 0, the energy required to relieve Nai+ block of Shaker (French, R.J., and J.B. Wells. 1977. J. Gen. Physiol. 70:707–724; Starkus, J.G., L. Kuschel, M. Rayner, and S. Heinemann. 2000. J. Gen. Physiol. 110:539–550) decreases with the molar fraction of Nai+ (XNa,i), in an extent not accounted for by the change in ΔμNa. Finally, when XNa,i = 1, GK collapses by the binding of Nai+ to two sites, with apparent Kds of 2 and 14.3 mM.

Publisher

Rockefeller University Press

Subject

Physiology

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3