Fabrication of atomically flat Pt layer on sapphire substrate by low angle incidence sputtering method
Author:
Affiliation:
1. Nara Institute of Science and Technology
2. Competitive Funding for Team-based Basic Researches, Japan Science and Technology Agency
3. Japan Atomic Energy Agency
4. National Institute for Materials Science
Publisher
The Materials Research Society of Japan
Link
https://www.jstage.jst.go.jp/article/tmrsj/36/1/36_11/_pdf
Reference12 articles.
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4. [4] T. Nishida, K. Kubo, H. Takeda, K. Uchiyama, T. Shiosaki, Ferroelectrics, 381, 74-79 (2009).
5. [5] T. Nishida, K. Kubo, M. Echizen, H. Takeda, K. Uchiyama, T. Shiosaki, Key Eng. Mater., 421-422, 502-505 (2010)
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