Swift chemical sputtering of covalently bonded materials

Abstract

Numerous experiments have shown that low-energy H ions and neutrals can erode amorphous carbon at ion energies of 1-10 eV, where physical sputtering is impossible, but at erosion rates which are clearly higher than those caused by thermal ions. In this paper, we will first review our computer simulation work providing an atom-level mechanism for how this erosion occurs, and then present some new results for H and He bombardment of tungsten carbide and amorphous hydrogenated silicon (a-Si:H), which indicate the mechanism can be of importance in a wide range of covalently bonded materials. We also discuss how the presented mechanism relates to previously described abstraction and etching mechanisms.