Raman Investigations of Metal Chalcogenide Thin Films (A Short Review)

Author:

Soonmin Ho1ORCID,Mandati Sreekanth2,Chandran Ramkumar3,Mallik Archana3,Bhuiyan Mohammad Arif Sobhan4,G Deepa K.5

Affiliation:

1. Centre for Green Chemistry and Applied Chemistry, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.

2. Center for Solar Energy Materials, International Advanced Research Center for Powder Metallurgy and New Materials, Balapur PO, Hyderabad – 500005, Telangana, India.

3. Electrometallurgy and Corrosion Laboratory, Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela, Orissa, India.

4. Electrical and Electronics Engineering, Xiamen University Malaysia, Jalan Sunsuria, Bandar Sunsuria, 43900 Sepang, Selangor, Malaysia.

5. Interdisciplinary Centre for Energy Research, Indian Institute of Science, Bangalore 560012, India.

Abstract

Cu In Se2 thin films are very important semiconductor material for solar cell applications because of chemical stability, direct band gap and high optical absorption coefficient. In this work, these films have been prepared by using different deposition techniques such as electrodeposition, solvothermal, vacuum evaporation, hydrothermal and pulsed electrode position technique. Cu In Se2 thin films were fully characterized by using field emission scanning electron microscopy, X-ray diffraction, Energy dispersive X-ray analysis, atomic force microscopy, UV-Visible spectrophotometer and Raman spectroscopy in order to study physical properties.

Publisher

Oriental Scientific Publishing Company

Subject

Drug Discovery,Environmental Chemistry,Biochemistry,General Chemistry

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