AN IMPROVED NONLINEAR CURRENT MODEL FOR GAN HEMT HIGH POWER AMPLIFIER WITH LARGE GATE PERIPHERY-Reference-Cited by-同舟云学术

AN IMPROVED NONLINEAR CURRENT MODEL FOR GAN HEMT HIGH POWER AMPLIFIER WITH LARGE GATE PERIPHERY

Published:2012-01 Issue:2-3 Volume:26 Page:284-293
ISSN:0920-5071
Container-title:Journal of Electromagnetic Waves and Applications
language:en
Short-container-title:Journal of Electromagnetic Waves and Applications

Author:

Sang L.¹,Schutt-Aine J. E.²

Affiliation:

1. a Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, China, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States;, Email: leisang@illinois.edu

2. b Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1163/156939312800030820

Reference14 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. ANALYSIS OF WAVE FUNCTION, ENERGY AND TRANSMISSION COEFFICIENTS IN GaN/ALGaN SUPERLATTICE NANOSTRUCTURES

3. FREQUENCY DOMAIN DYNAMIC THERMAL ANALYSIS IN GAAS HBT FOR POWER AMPLIFIER APPLICATIONS

4. Extensions of the Chalmers nonlinear HEMT and MESFET model

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