Modeling and Optimization of Traveling Wave Field Effect Transistors-Reference-Cited by-同舟云学术

Modeling and Optimization of Traveling Wave Field Effect Transistors

Published:1991-01-01 Issue:4-5 Volume:5 Page:419-438
ISSN:0920-5071
Container-title:Journal of Electromagnetic Waves and Applications
language:en
Short-container-title:Journal of Electromagnetic Waves and Applications

Author:

Byl C.¹,Crosnier Y.²

Affiliation:

1. a Centre Hyperfrénces et Semiconducteurs U.A. 287 CNRS - Bit. P4 Université des Sciences et Techniques de Lille Flandres Artois 59655 Villenueve d'Ascq Cedex, France

2. b Centre Hyperfrénces et Semiconducteurs U.A. 287 CNRS - Bit. P4 Université des Sciences et Techniques de Lille Flandres Artois 59655 Villenueve d'Ascq Cedex, France

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1163/156939391X00167

Reference7 articles.

1. Gallium arsenide traveling-wave field-effect transistors

2. Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplification

3. Bias-variable characteristics of coupled coplanar waveguide on GaAs substrate

4. Distributed Equivalent-Circuit Model for Traveling-Wave FET Design

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1. A FET propagation effects;2007 14th IEEE International Conference on Electronics, Circuits and Systems;2007-12

2. Propagation effects on a FET access resistance;2006 IEEE International Symposium on Industrial Electronics;2006-07

3. Variation in intrinsic parameters of transistor with gate width;Electronics Letters;2000