Sol–Gel-Processed Y2O3 Multi-level Resistive Memory Cells for Neural Networks

Abstract

Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics, without requiring a high voltage forming process. The effect of current compliance on the Y2O3 RRAM devices was investigated and revealed that as the set current compliance values increased, the resistance values gradually decreased. Consequently, intermediate resistance values were obtained, which are suitable for multi-level cell (MLC) switching. The fabricated Y2O3 RRAM devices were capable of functioning as an MLC with a capacity of 2 bits in one cell, utilizing three low resistance states and one common high resistance state. The potential of the Y2O3 RRAM for neural networks was further explored through numerical simulations. Hardware neural networks based on the Y2O3 RRAM demonstrated effective digit image classification with a high accuracy rate of approximately 88%, comparable to the ideal software-based classification (~92%). This suggests that the proposed RRAM has the potential to be utilized as a memory component in practical neuromorphic systems.