Abstract
Two types of trenches cross-section in conventional vertical and brand new reverse-V-shape have fabricated on SCD substrate by micro-jet water-assist laser, the epitaxial lateral overgrowth technique has applied by microwave plasma chemical vapor deposition system in forming multiple micrometer-size channels. Raman and SEM techniques have applied in analyze both types growth layer characterization. Optical microscope has used to test microchannels hollowness. As a result, with the brand new reverse-V-shape trench, epitaxial lateral overgrowth layer reaches higher SCD surface morphology and crystal quality.
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2 articles.
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