Abstract
Silicon nanowires (SiNWs) were produced by an electroless method on FZ-Si (100) wafer, in HF/AgNO3 solution. The influence of etching time and temperature on SiNWs morphology were studied using FESEM images. Optical properties were also investigated by optical absorption spectroscopy and low-temperature photoluminescence at 4.2 K. Considering their role as active regions, photo- voltaic properties of SiNWs solar cells were studied for their different lengths. Photovoltaic measurements were taken in 1 sun condition under AM 1.5 illumination supplied by a solar simulator. Measurements indicated a reduction in effi ciency as SiNWs length increased, which might be attributed to increased dangling states on nanowires surfaces.
Publisher
Iraqi Forum for Intellectuals and Academics
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