Abstract
To investigate basic polishing properties of fixed abrasive polishing using alumina abrasive grain for Si wafer, we used a pyramidal structured polishing pad having alumina abrasives and aqueous KOH solution as the polishing fluid. We clarified that the optimum KOH solution concentration required to get a smooth surface 5 wt% and finished surface roughness of 80nmRz. The cutting edge was hardly worn and polishing performance was maintained without dressing.
Publisher
Fuji Technology Press Ltd.
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering
Reference21 articles.
1. T. Kusumi, Y. Sato, H. Ikeda, Y. Akagami, and N. Umehara, “The development of AC electric field assisted polishing for silicon carbide substrates with control of abrasive behavior – Clarification of improvement mechanism for polishing rate with electric field –,” J. of the Japan Society for Precision Engineering, Vol.79, pp. 87-92, 2013.
2. T. Sakamoto, A. Kubota, and M. Touge, “Ultraviolet-assisted polishing of 2 inch SiC substrate,” J. of Japan Society for Abrasive Technology, Vol.57, pp. 524-529, 2013.
3. T. Kurita, K. Miyake, K. Kawata, K. Ashida, and T. Kato, “Development of new combined polishing process for single crystal silicon carbide,” J. of Japan Society for Abrasive Technology, Vol.58, pp. 30-35, 2014.
4. T. Ito and K. Morishge, “Polishing process automation by industrial robots with polished surface quality judged based on imaging processing,” Int. J. of Automation Technology, Vol.3, pp. 130-135, 2009.
5. Y. Ueki, K. Morishige, T. Ishida, and Y. Takeuchi, “Automation of polishing process by industrial robots – polishing path generation in consideration of surface curvature –,” J. of the Japan Society for Precision Engineering, Vol.70, pp. 1522-1526, 2004.
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