Author:
Yamamoto Michitaka,Matsumae Takashi,Kurashima Yuichi,Takagi Hideki,Suga Tadatomo,Itoh Toshihiro,Higurashi Eiji, , ,
Abstract
Direct transfer of Au films deposited on smooth SiO2film with RMS (root mean square) surface roughness of 0.24 nm was investigated with the aim of generating smooth Au surfaces. Deposited Au films with different thicknesses were transferred to rough Au surfaces on target substrates at room temperature with a contact pressure of 50 MPa. Observation of the growth behavior of the deposited films revealed that they formed a continuous structure when their nominal film thickness was around 15 nm or above. The transfer of continuous Au films with a thickness of 20, 51, or 102 nm reduced the RMS roughness of the rough Au surfaces from 1.6 nm to 0.4 nm. In contrast, the transfer of Au films with a thickness less than 5 nm increased their surface roughness. This direct transfer technique should thus be useful for low temperature bonding.
Publisher
Fuji Technology Press Ltd.
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献