Temperature Effects on Developmental Stages of Isolates from Three Clonal Lineages of Phytophthora infestans

Author:

Mizubuti Eduardo S. G.,Fry William E.

Abstract

Sporangia germination of Phytophthora infestans isolates belonging to three clonal lineages (US-1, -7, and -8) was assessed at temperatures ranging from 10 to 25°C. At 10°C there were no significant differences in germination percents among US-1, -7, and -8. At 18 or 20°C US-7 and -8 had significantly lower germination percents than US-1. At 21, 24, or 25°C all clonal lineages had low germination percents. Sporangia of the US-7 and -8 lineages germinated more quickly at 15°C (P = 0.001) during the first 2 h than did the US-1 lineage. The incubation period (IP), lesion area (LA), and sporulation per unit of lesion area (SPU) of the isolates were assessed on inoculated detached leaflets of susceptible potato cv. Norchip kept at 10, 15, 20, or 25°C. In general, IP declined exponentially and LA increased exponentially with increasing temperatures. SPU had a quadratic shape, with the maximum at 15°C. Averaged over all temperatures, the US-7 lineage had the shortest IP (59.3 h compared to 66.4 h for US-1 [P = 0.012] and 71.7 h for US-8 [P = 0.026]). Again, averaged over all temperatures, the US-8 lineage had a larger LA (P = 0.030) than US-1. There was no significant difference between US-7 and -1 for LA. There were no significant differences among lineages in terms of SPU. These results indicate that clonal lineages differ from each other in epidemiological attributes, but the differences can be complex.

Publisher

Scientific Societies

Subject

Plant Science,Agronomy and Crop Science

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3