1. Baek IG, Lee MS, Seo S, Lee MJ, Seo DH, Suh DS, Park JC, Park SO, Kim HS, Yoo IK, Chung UI, Moon JT: Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. IEDM Tech Dig 2004, 587.
2. Chen A, Haddad S, Wu YC, Fang TN, Lan Z, Avanzino S, Pangrle S, Buynoski M, Rathor M, Cai W, Tripsas N, Bill C, VanBuskirk M, Taguchi M: Non-volatile resistive switching for advanced memory applications. IEDM Tech Dig 2005, 746.
3. Lee HY, Chen PS, Wu TY, Chen YS, Wang CC, Tzeng PJ, Lin CH, Chen F, Lien CH, Tsai MJ: Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2based RRAM. IEDM Tech Dig 2008, 1.
4. Zhang T, Zhang X, Ding L, Zhang W: Study on resistance switching properties of Na0.5Bi0.5TiO3thin films using impedance spectroscopy. Nanoscale Res Lett 2009, 4: 1309–1314. 10.1007/s11671-009-9397-4
5. Li Y, Long S, Zhang M, Liu Q, Shao L, Zhang S, Wang Y, Zuo Q, Liu S, Liu M: Resistive switching properties of Au/ZrO2/Ag structure for low-voltage nonvolatile memory applications. IEEE Electron Device Lett 2010, 31: 117–119.