Author:
Kim Hyo Jin,Mothohisa Junichi,Fukui Takashi
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference11 articles.
1. Nishi K, Saito H, Sugou S, Lee JS: A narrow Photoluminesence line with of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates. Appl Phys Lett 1999, 74: 1111. 10.1063/1.123459
2. Lee SW, Hirakawa K, Shimada Y: Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures. Appl Phys Lett 1999, 75: 1428. 10.1063/1.124715
3. Hahn CK, Motohisa J, Fukui T: Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy. Appl Phys Lett 2000, 76: 514. 10.1063/1.125805
4. Son MH, Jung SK, Min BD, Hyun CK, Choi BH, Kim EK, Kim Y, Lim JS: Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern. Jpn J Appl Phys 1999, 38: L1003. 10.1143/JJAP.38.L1003
5. Kim HJ, Motohisa J, Fukui T: Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates. Appl Phys Lett 2002, 81: 5747.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献