Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)-Reference-Cited by-同舟云学术

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Published:2011-02-09 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Xu Pengfa,Lu Jun,Chen Lin,Yan Shuai,Meng Haijuan,Pan Guoqiang,Zhao Jianhua

Abstract

Abstract MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature T t, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated T t of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-6-125.pdf

Reference27 articles.

1. Zhao YJ, Geng WT, Freeman AJ: Structural, electronic, and magnetic properties of α- and β-MnAs: LDA and GGA investigations. Phys Rev B 2002, 65: 113202. 10.1103/PhysRevB.65.113202

2. Bonanni A: Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths. Semicond Sci Technol 2007, 22: R41. 10.1088/0268-1242/22/9/R01

3. Bonanni A, Simbrunner C, Wegscheider M, Przybylinska H, Wolos A, Sitter H, Jantsch W: Doping of GaN with Fe and Mg for spintronics applications. Phys Stat Sol (b) 2006, 243: 1701. 10.1002/pssb.200565230

4. Schippan F, Trampert A, Däweritz L, Ploog KH, Dennis B, Neumann KU, Ziebeck KRA: Microstructure formation during MnAs growth on GaAs(0 0 1). J Cryst Growth 2000, 201/202: 674. 10.1016/S0022-0248(98)01448-1

5. Tanaka M, Saito K, Nishinaga T: Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures. Appl Phys Lett 1999, 74: 64. 10.1063/1.122953

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