Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-6-163.pdf
Reference13 articles.
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2. Tiwari S, Rana F, Chan K, Hanafi H, Wei C, Buchanan D: Volatile and non-volatile memories in silicon with nano-crystal storage. IEEE Int Electron Devices Meeting Tech Dig 1995, 521–524.
3. Gacem K, EI Hdiy A, Troyon M, Berbezier I, Szkutnik PD, Karmous A, Ronda A: Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide. J Appl Phys 2007, 102: 093704. 10.1063/1.2804013
4. Howell SW, Janes DB: Time evolution studies of the electrostatic surface potential of low-temperature-grown GaAs using electrostatic force microscopy. J Appl Phys 2005, 97: 043703. 10.1063/1.1844615
5. Thirstrup C, Sakurai M, Stokbro K, Aono M: Visible light emission from atomic scale patterns fabricated by the scanning tunneling microscope. Phys Rev Lett 1999, 82: 1241. 10.1103/PhysRevLett.82.1241
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