Author:
Wang Ching-Chi,Liao Po-Hsiang,Kuo Ming-Hao,George Tom,Li Pei-Wen
Abstract
Abstract
We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si3N4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kinetics-based model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference30 articles.
1. Ekimov AI, Onushchenko AA: Quantum size effect in three-dimensional microscopic semiconductor crystals. JETP Lett 1981, 34(6):345–349.
2. Robledo L, Elzerman J, Jundt G, Atature M, Hogele A, Falt S, Imamoglu A: Conditional dynamics of interacting quantum dots. Science 2008, 320(5877):772–775. 10.1126/science.1155374
3. Astafiev O, Inomata K, Niskanen AO, Yamamoto T, Pashkin YA, Nakamura Y, Tsai JS: Single artificial-atom lasing. Nature 2007, 449(7162):588–590. 10.1038/nature06141
4. Tiwari S, Rana F, Chan K, Shi L, Hanafi H: Single charge and confinement effects in nano-crystal memories. Appl Phys Lett 1996, 69(9):1232–1234. 10.1063/1.117421
5. Harman T, Taylor P, Walsh M, La Forge B: Quantum dot superlattice thermoelectric materials and devices. Science 2002, 297(5590):2229–2232. 10.1126/science.1072886
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献