Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K-Reference-Cited by-同舟云学术

Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K

Published:2014-06-25 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Valalaki Katerina,Nassiopoulou Androula Galiouna

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-9-318.pdf

Reference49 articles.

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2. Cullis AG: Structure and crystallinity of porous silicon. In Properties of Porous Silicon, Volume 18. Edited by: L.T.Canham. UK: Emis Datareviews, IEE, an INSPEC Publ; 1997.

3. Nassiopoulou AG: Thermal isolation of porous Si. In Handbook of Porous Si. Edited by: Canham L. Springer Publ; in press in press

4. Nassiopoulou AG, Kaltsas G: Porous silicon as an effective material for thermal isolation on bulk crystalline silicon. Phys Status Solidi (a) 2000, 182: 307–311.

5. Kaltsas G, Nassiopoulou AG: Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation. Sensors and Actuators A 1999, 76: 133–138.

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