Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-8-410.pdf
Reference32 articles.
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4. Huang Z, Zhang X, Reiche M, Liu L, Lee W, Shimizu T, Senz S, Gösele U: Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching. Nano Lett 2008, 8: 3046–3051.
5. Huang Z, Shimizu T, Senz S, Zhang Z, Zhang X, Lee W, Geyer N, Gösele U: Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred <100> etching directions. Nano Lett 2009, 9: 2519–2525.
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