Author:
Wong Hei,Zhou Jian,Zhang Jieqiong,Jin Hao,Kakushima Kuniyuki,Iwai Hiroshi
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Wong H, Zhang J: Challenges of next generation ultrathin gate dielectrics. In Proc IEEE Int Symp Next Generation Electronics; Taoyuan. Piscataway: IEEE Press; 2014.
2. Wong H: Nano-CMOS Gate Dielectric Engineering. Boca Raton: CRC Press; 2012.
3. Wong H, Iwai H: On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors. Microelectron Engineer 2006, 83: 1867–1904. 10.1016/j.mee.2006.01.271
4. Lichtenwalner DJ, Jur JS, Kingon AI, Agustin MP, Yang Y, Stemmer S, Goncharova LV, Gustafsson T, Garfunkel E: Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction. J Appl Phys 2005, 98: 024314. 10.1063/1.1988967
5. Yamada H, Shimizu T, Suzuki E: Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition. Jpn J App Phys 2002, 41: L368–370. 10.1143/JJAP.41.L368
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