Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD-Reference-Cited by-同舟云学术

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Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

Published:2014-08-21 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Vázquez-Valerdi Diana E,Luna-López Jose A,Carrillo-López Jesús,García-Salgado Godofredo,Benítez-Lara Alfredo,Espinosa-Torres Néstor D

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-9-422.pdf

Reference24 articles.

1. Pai PG, Chao SS, Takagi Y, Lucovsky G: Infrared spectroscopic study of silicon oxide (SiOx) films produced by plasma enhanced chemical vapor deposition. J Vac Sci Technol A 1986, 4(3):689–694. 10.1116/1.573833

2. Canham LT: Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett 1990, 57(10):1046–1048. 10.1063/1.103561

3. Dong D, Irene EA, Young DR: Preparation and some properties of chemically vapor deposited Si-Rich SiO2 and Si3N4films. J Electrochem Soc 1978, 125(5):819–823. 10.1149/1.2131555

4. Fang YC, Li WQ, Qi LJ, Li LY, Zhao YY, Zhang ZJ, Lu M: Photoluminescence from SiO x thin films: effects of film thickness and annealing temperature. Nanotechnology 2004, 15: 495–500. 10.1088/0957-4484/15/10/001

5. Chen XY, Lu Y, Tang LJ, Wu YH, Cho BJ, Dong JR, Song WD: Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition. J Appl Phys 2005, 97: 014913. 10.1063/1.1829789

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