Effects of an intense, high-frequency laser field on bound states in Ga1 − xIn x N y As1 − y/GaAs double quantum well-Reference-Cited by-同舟云学术

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Effects of an intense, high-frequency laser field on bound states in Ga1 − xIn x N y As1 − y/GaAs double quantum well

Published:2012-10-31 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Ungan Fatih,Yesilgul Unal,Şakiroğlu Serpil,Kasapoglu Esin,Erol Ayse,Arikan Mehmet Cetin,Sarı Huseyin,Sökmen Ismail

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-7-606.pdf

Reference38 articles.

1. Reed MA: Quantum dots. Sci Am 1993, 268: 118.

2. Loss D, DiVicenzo DP: Quantum computation with quantum dots. Phys Rev A 1998, 57: 120. 10.1103/PhysRevA.57.120

3. Jiang X, Li SS, Tidrow MZ: Study of intersubband transition in quantum dots and quantum dot infrared photodetectors. Physica E 1999, 5: 27. 10.1016/S1386-9477(99)00026-0

4. Kristaedter N, Schmidt OG, Ledentsov NN, Bimberg D, Ustinov VM, Yu A, Zhukov AE, Maximov MV, Kopev PS, Alferov ZI: Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers. Appl Phys Lett 1996, 69: 1226. 10.1063/1.117419

5. Imamura K, Sugiyama Y, Nakata Y, Muto S, Yokoyama N: New optical memory structure using self-assembled InAs quantum dots. Jpn J Appl Phys 1995, 34: L1445. 10.1143/JJAP.34.L1445

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