Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-9-65.pdf
Reference42 articles.
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5. Wang X, Ouyang Y, Li X, Wang H, Guo J, Dai H: Room temperature all semiconducting sub-10 nm graphene nanoribbon field effect transistors. Phys Rev Lett 2008, 100: 206803.
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