Author:
Chen Shih-Chen,Hsieh Dan-Hua,Jiang Hsin,Liao Yu-Kuang,Lai Fang-I,Chen Chyong-Hua,Luo Chih Wei,Juang Jenh-Yih,Chueh Yu-Lun,Wu Kaung-Hsiung,Kuo Hao-Chung
Abstract
Abstract
In this work, CuIn1 - x
Ga
x
Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x
Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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