Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-7-526.pdf
Reference8 articles.
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2. Ha W, Gambin V, Wistey M, Bank S, Kim S, Harris JS Jr: Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm. IEEE Photonics Tech Letts 2002, 14: 591.
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4. Björlin ES, Geske J, Bowers JE: Optically pre-amplified receiver at 10Gb/s using a vertical-cavity SOA. Elect Lett 2001, 37: 1474–1475. 10.1049/el:20010997
5. Bouché N, Corbett B, Kuszelewicz R, Ray R: Vertical-cavity amplifying photonic switch at 1.5 mm. IEEE Photon Tech Lett 1996, 8: 1035–1037.
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2. Characterization of temperature dependent operation of a GaInNAs-based RCEPD designed for 1.3 μm;Superlattices and Microstructures;2017-02
3. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs;Nanoscale Research Letters;2014-01-13
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