The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template-Reference-Cited by-同舟云学术

The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

Published:2014-10-21 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Jiang Changjun,Wu Lei,Wei WenWen,Dong Chunhui,Yao Jinli

Abstract

Abstract A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. PACS 68.37.-d; 73.40.Rw; 73.61.-r

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-9-584.pdf

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