Author:
Hu Changcheng,Ye Huiqi,Wang Gang,Tian Haitao,Wang Wenxin,Wang Wenquan,Liu Baoli,Marie Xavier
Abstract
Abstract
Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D
s.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
15 articles.
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