Structural variations of Si1−xC x and their light absorption controllability-Reference-Cited by-同舟云学术

Structural variations of Si1−xC x and their light absorption controllability

Published:2012-09-06 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Moon Jihyun,Baik Seung Jae,O Byungsung,Lee Jeong Chul

Abstract

Abstract The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 − x C x . We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 − x C x produced by thermal annealing of the Si-rich Si1 − x C x and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-7-503.pdf

Reference38 articles.

1. Takagi H, Ogawa H, Yamazaki Y, Ishizaki A, Nakagiri T: Quantum size effects on photoluminescence in ultrafine Si particles. Appl Phys Lett 1990, 56: 2379–2381. 10.1063/1.102921

2. Kim T-W, Cho C-H, Kim B-H, Park S-J: Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH and NH. Appl Phys Lett 2006, 88: 123102. 10.1063/1.2187434

3. Nozik AJ, Beard MC, Luther JM, Law M, Ellinson RJ, Johnson JC: Semiconductor quantum dots and quantum dot arrays and applications of multiple exciton generation to third-generation photovoltaic solar cells. Chem Rev 2010, 110: 6873–6890. 10.1021/cr900289f

4. Ding Y, Dong Y, Bapat A, Nowak JD, Carter CB, Kortshagen UR, Campbell SA: Single nanoparticle semiconductor devices. IEEE Trans Electron Devices 2006, 53: 2525–2531.

5. Baik SJ, Lim KS: Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO tunnel barrier. Appl Phys Lett 2002, 81: 5186–5188. 10.1063/1.1533119

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