Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP-Reference-Cited by-同舟云学术

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Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP

Published:2011-05-20 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Grym Jan,Procházková Olga,Yatskiv Roman,Piksová Kateřina

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-392.pdf

Reference23 articles.

1. Hossam H: Chemical sensors based on molecularly modified metallic nanoparticles. J Phys D 2007, 40(23):7173–7186. 10.1088/0022-3727/40/23/S01

2. Hasegawa H, Akazawa M: Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics. Appl Surf Sci 2008, 254(24):8005–8015. 10.1016/j.apsusc.2008.03.051

3. Hasegawa H, Ohno H: Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces. J Vac Sci Technol B 1986, 4(4):1130–1138. 10.1116/1.583556

4. Hokelek E, Robinson GY: A study of Schottky contacts on indium phosphide. J Appl Phys 1983, 54(9):5199–5205. 10.1063/1.332745

5. Wada O, Majerfeld A, Robson PN: InP Schottky contacts with increased barrier height. Solid-State Electron 1982, 25(5):381–387. 10.1016/0038-1101(82)90123-X

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