Radical-assisted chemical doping for chemically derived graphene-Reference-Cited by-同舟云学术

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Radical-assisted chemical doping for chemically derived graphene

Published:2013-12 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Ishikawa Ryousuke,Ko Pil Ju,Bando Masashi,Kurokawa Yasuyoshi,Sandhu Adarsh,Konagai Makoto

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-8-534.pdf

Reference39 articles.

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2. Berger C, Song ZM, Li TB, Li XB, Ogbazghi AY, Feng R, Dai Z, Marchenkov AN, Conrad EH, First PN, de Heer WA: Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J Phys Chem B 2004, 108: 19912–19916. 10.1021/jp040650f

3. Zhang YB, Tan YW, Stormer HL, Kim P: Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 2005, 438: 201–204. 10.1038/nature04235

4. Geim AK, Novoselov KS: The rise of graphene. Nat Mater 2007, 6: 183–191. 10.1038/nmat1849

5. Ishikawa R, Bando M, Wada H, Kurokawa Y, Sandhu A, Konagai M: Layer-by-layer assembled transparent conductive graphene films for silicon thin-film solar cells. Jpn J Appl Phys 2012, 51: 11PF01. 10.7567/JJAP.51.11PF01

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