Influence of hole shape/size on the growth of site-selective quantum dots
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-8-504.pdf
Reference39 articles.
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2. Atkinson P, Bremner S, Anderson D, Jones G, Ritchie D: Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates. Microelectron J 2006, 37(12):1436–1439. 10.1016/j.mejo.2006.05.003
3. Heidemeyer H, Müller C, Schmidt OG: Highly ordered arrays of In(Ga)As quantum dots on patterned GaAs (001) substrates. J Cryst Growth 2004, 261(4):444–449. 10.1016/j.jcrysgro.2003.09.030
4. Ishikawa T, Nishimura T, Kohmoto S, Asakawa K: Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography. Appl Phys Lett 2000, 76(2):167–169. 10.1063/1.125691
5. Jeppesen S, Miller M, Kowalski B, Maximov I, Samuelson L: InAs quantum dots in GaAs holes: island number dependence on hole diameter and conduction-band coupling estimates. Superlattice Microst 1998, 23(6):1347–1352. 10.1006/spmi.1996.0428
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