Numerical calculation of temperature, velocity, and species concentration distributions in a hot filament chemical vapor deposition in a reactor using a CH4/H2 mixture

Abstract

AbstractThis study is a numerical modeling of transport phenomena occurring in the reaction chamber during diamond or amorphous hydrogenated carbon films growth by a hot filament chemical vapor deposition (HFCVD) technique. A two-dimensional model was adopted to study the HFCVD reactor. The equations of heat, momentum, and mass transfer were solved numerically; the simulation was performed using a program in FORTRAN language. All temperature, velocity, and species concentration distributions were similar at the filaments and they were also similar between the filaments. The results show that the gas temperature increases when the number of filaments increases from three to four filaments. We also noted an increase in the production of CH3 and C2H5 radicals near the surface; there was also an increase in the growth rate of the thin film. The concentrations of C2H6, C2H4, and C2H5 were very high. Temperature and concentrations were affected by the distance between filaments and the distance filaments-substrates.