Author:
Zhang Zhaohao,Li Yudong,Xu Jing,Tang Bo,Xiang Jinjuan,Li Junjie,Zhang Qingzhu,Wu Zhenhua,Yin Huaxiang,Luo Jun,Wang Wenwu
Abstract
AbstractIn this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer. Furthermore, the subthreshold characteristics of the devices with double gate modulation are investigated extensively. Contributing to the advantages of the back-gate voltage coupling effects, the minimum subthreshold swing (SS) value of a 40 nm ETSOI device could be adjusted from the initial 80.8–50 mV/dec, which shows ultra-steep SS characteristics. To illustrate this electrical character, a simple analytical model based on the transient Miller model is demonstrated. This work shows the feasibility of FE ETSOI FET for ultra-low-power applications with dynamic threshold adjustment.
Funder
the Science and Technology program of Beijing Municipal Science and Technology Commission under grants
National Natural Science Foundation of China under grants
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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