Author:
Yuan Fang-Yuan,Deng Ning,Shih Chih-Cheng,Tseng Yi-Ting,Chang Ting-Chang,Chang Kuan-Chang,Wang Ming-Hui,Chen Wen-Chung,Zheng Hao-Xuan,Wu Huaqiang,Qian He,Sze Simon M.
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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3. Li YT, Long SB, Zhang MH, Liu Q, Shao LB, Zhang S, Wang Y, Zuo QY, Liu S, Liu M (2010) Resistive switching properties of structure for low-voltage nonvolatile memory applications. IEEE Electron Device Lett 31:117–119.
4. Yang FM, Chang TC, Liu PT, Yeh PH, Yu YC, Lin JY, Sze SM, Lou JC (2007) Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide. Appl Phys Lett 90:132102.
5. Son JY, Shin YH (2008) Direct observation of conducting filaments on resistive switching of NiO thin films. Appl Phys Lett 92:833.
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