Author:
Moraru Daniel,Samanta Arup,Tyszka Krzysztof,Anh Le The,Muruganathan Manoharan,Mizuno Takeshi,Jablonski Ryszard,Mizuta Hiroshi,Tabe Michiharu
Funder
Ministry of Education, Culture, Sports, Science, and Technology (JP)
Research Institute of Electronics, Shizuoka University, Japan
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference50 articles.
1. Moore G. Cramming more components onto integrated circuits. Electronics. 1965;38:114–7.
2. International Technology Roadmap for Semiconductors: http://www.itrs.net/ (2014). Accessed 15 August 2015.
3. Xia Q, Xu J, Taur Y. Review and critique of analytical models of MOSFET short-channel effects in subthreshold. IEEE Trans Electron Dev. 2012;59:1569–79.
4. Zwanenburg FA, Dzurak AS, Morello A, Simmons MY, Hollenberg LCL, Klimeck G, et al. Silicon quantum electronics. Rev Mod Phys. 2013;85:961–1019.
5. Novoselov KS, Geim AK, Morozov SV, Jiang D, Katsnelson MI, Grigorieva IV, et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature. 2005;438:197–200.
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