Author:
Zhang Dong,Ren Weina,Zhu Zhichao,Zhang Haifeng,Liu Bo,Shi Wangzhou,Qin Xiaomei,Cheng Chuanwei
Abstract
Abstract
In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that the Si nanocone arrays present excellent broadband light antireflectance properties, which are attributed to the gradient in the effective refractive index of nanocones and enhanced light trapping owing to optical diffraction. The inverted Si nanocone arrays might find a variety of applications in solar cells and photodetectors.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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