Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Published:2017-03-29 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Xing,Liu Hongxia,Zhao Lu,Fei Chenxi,Feng Xingyao,Chen Shupeng,Wang Yongte

Funder

National Natural Science Foundation of China

Foundation for Fundamental Research of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2018-8.pdf

Reference42 articles.

1. Armelao L, Pascolini M, Bottaro G, Bruno G, Giangregorio MM, Losurdo M, Malandrino G, Lo Nigro R, Fragalà ME, Tondello E (2009) Microstructural and optical properties modifications induced by plasma and annealing treatments of lanthanum oxide sol–gel thin films. J Phys Chem C 113:2911–2918

2. Wei C, Fan JL, Gong HR (2015) Structural, thermodynamic, and mechanical properties of bulk La and A-La2O3. J Alloy Compd 618:615–622

3. Richard D, Errico LA, Rentería M (2015) Electronic, structural, and hyperfine properties of pure and Cd-doped hexagonal La2O3 semiconductor. Comp Mater Sci 102:119–125

4. Kim WH, Maeng WJ, Moon KJ, Myoung JM, Kim H (2010) Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition. Thin Solid Films 519:362–366

5. Flege JI, Kaemena B, Schmidt T, Falta J (2014) Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon. J Vac Sci Technol B 32(3):03D124

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