The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Author:

Zhang TaoORCID,Shen Yixian,Feng Qian,Tian Xusheng,Cai Yuncong,Hu Zhuangzhuang,Yan Guangshuo,Feng Zhaoqing,Zhang Yachao,Ning Jing,Xu Yongkuan,Lian Xiaozheng,Sun Xiaojuan,Zhang Chunfu,Zhou Hong,Zhang Jincheng,Hao Yue

Abstract

AbstractIn this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕb increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga2O3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R254 nm/R400 nm up to 1.26 × 103 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga2O3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

Funder

the National Natural Science Foundation of China

the National key Research and Development Program of China

National 111 Centre

State Key Laboratory of Luminiscence and Applications

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

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