Strain Effect on Thermoelectric Performance of InSe Monolayer-Reference-Cited by-同舟云学术

Strain Effect on Thermoelectric Performance of InSe Monolayer

Published:2019-08-19 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Qian,Han Lihong,Wu Liyuan,Zhang Tao,Li Shanjun,Lu Pengfei

Funder

National Key Research and Development Program of China

National Natural Science Foundation

Open Program of State Key Laboratory of Functional Materials for Informatics

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-019-3113-9.pdf

Reference62 articles.

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3. Gomes LC, Carvalho A (2015) Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure. Physics 92

4. Wu L et al (2018) Stanene nanomeshes as anode materials for Na-ion batteries. Journal of Materials Chemistry A 6(17):7933–7941

5. Feng W et al (2014) Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface. Advanced Materials 26(38):6587–6593

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