Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells-Reference-Cited by-同舟云学术

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Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells

Published:2016-02-01 Issue:1 Volume:11 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Izhnin Ihor I.,Nesmelov Sergey N.,Dzyadukh Stanislav M.,Voitsekhovskii Alexander V.,Gorn Dmitry I.,Dvoretsky Sergey A.,Mikhailov Nikolaj N.

Funder

Russian Government State task

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-016-1276-1.pdf

Reference11 articles.

1. Brounkov PN, Benyattou T, Guillot G, Clark CA (1995) Admittance spectroscopy of InAlAs/InGaAs single-quantum-well structure with high concentration of electron traps in InAlAs layers. J Appl Phys 77:240–243

2. Zubkov VI (2007) Characterization of In x Ga1-x As/GaAs quantum-well heterostructures by CV measurements: band offsets, quantum-confinement levels, and wave functions. Semiconductors 41:320–326

3. Zhang SK, Zhu HJ, Lu F, Jiang ZM, Xun W (1998) Coulomb charging effects in self-assembled Ge quantum dots studied by admittance spectroscopy. Phys Rev Lett 80:3340–3343

4. Yakimov AI, Dvurechenskii AV, Nikiforov AI, Pchelyakov OP (1998) Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy. Thin Solid Films 336:332–335

5. Yakimov AI, Dvurechenskii AV, Nikiforov AI, Bloshkin AA, Nenashev AV, Volodin VA (2006) Electronic states in Ge∕Si quantum dots with type-II band alignment initiated by space-charge spectroscopy. Phys Rev B 73:115333

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3. Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy;Russian Physics Journal;2019-09

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