Author:
Dan’ko Viktor,Indutnyi Ivan,Myn’ko Victor,Lukaniuk Mariia,Shepeliavyi Petro
Abstract
Abstract
The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e., act as positive etchants. The diffraction gratings and 2-D interference structures on germanium ChGs - more environmentally acceptable compounds than traditionally used arsenic chalcogenides - were recorded, and their characteristics were studied.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference17 articles.
1. De Neulville J, Moss S, Ovshinsky S. Photostructural transformation in amorphous As2Se3 and As2S3 films. J Non-Cryst Sol. 1974;13:191–223.
2. Matthias W, Noboru Y. Phase-change materials for rewriteable data storage. Nat Mater. 2007;6:824–32.
3. Indutnyy I, Kostyshyn M, Kasjarum I, Min'ko V, Michailovska E, Romanenko P. Photostimulated interactions in metal-semiconductor structures. Kyiv: Naukova Dumka; 1992.
4. Kolobov A, Tanaka K. Nanoscale mechanism of photo-induced metastability and reversible photodarkening in chalcogenide vitreous semiconductors. Phizika i Tehnika Poluprovodnikov (Russia). 1998;32:899.
5. Ganjoo A, Jain H, Khalid S. Atomistic observation of photo-expansion and photo-contraction in chalcogenide films by in situ EXAFS. J Non-Cryst Solids. 2008;354:2673.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献