Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing-Reference-Cited by-同舟云学术

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Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing

Published:2016-02-01 Issue:1 Volume:11 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Yanchao,Gao Jinsong,Yang Haigui,Wang Xiaoyi,Shen Zhenfeng

Funder

National Natural Science Foundation of China

the Science and Technology Innovation Project of CIOMP

the Science and Technology Innovation Project of Jilin Province

the Science and Technology Innovation Foundation of CAS

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-016-1281-4.pdf

Reference22 articles.

1. Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sulivan JT et al (2014) Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nat Commun 5:3011

2. Hu S, Han P, Wang S, Mao X, Li X, Gao L (2012) Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing. Semicond Sci Tech 27:102002–102005

3. Lin K, Chen H, Lai Y, Yu C (2014) Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths. Nat Commun 5:3288–3288

4. Simmons CB, Akey AJ, Mailoa JP, Recht D, Aziz MJ, Buonassisi T (2014) Enhancing the infrared photoresponse of silicon by controlling the Fermi level location within an impurity band. Adv Funct Mater 24:2852–2858

5. Sheehy MA, Tull BR, Friend CM, Mazur E (2007) Chalcogen doping of silicon via intense femtosecond-laser irradiation. Mater Sci Eng B-Adv 137:289–294

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