A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process-Reference-Cited by-同舟云学术

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A RRAM Integrated 4T SRAM with Self-Inhibit Resistive Switching Load by Pure CMOS Logic Process

Published:2017-06-15 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Hsu Meng-Yin^ORCID,Liao Chu-Feng,Shih Yi-Hong,Lin Chrong Jung,King Ya-Chin

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2191-9.pdf

Reference34 articles.

1. International Conference on the Internet of Things;Y Wang,2015

2. International Symposium on Quality Electronic Design;HN Patel,2016

3. International Symposium on Circuits and Systems;N Gupta,2016

4. International Conference on Computer and Communication Technology;P Upadhyay,2010

5. International Symposium on Low Power Electronics and Design;H Morimura,1996

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