Zn‐doped MnOx nanowires displaying plentiful crystalline defects and tunable small cross-sections for an optimized volcano-type performance towards supercapacitors

Author:

Ribeiro Geyse A. C.,de Lima Scarllett L. S.,Santos Karolinne E. R.,Mendonça Jhonatam P.,Macena Pedro,Pessanha Emanuel C.,Cordeiro Thallis C.,Gardener Jules,Solórzano Guilhermo,Fonsaca Jéssica E. S.,Domingues Sergio H.,dos Santos Clenilton C.,Dourado André H. B.,Tanaka Auro A.,da Silva Anderson G. M.,Garcia Marco A. S.

Abstract

AbstractMnOx-based nanomaterials are promising large-scale electrochemical energy storage devices due to their high specific capacity, low toxicity, and low cost. However, their slow diffusion kinetics is still challenging, restricting practical applications. Here, a one-pot and straightforward method was reported to produce Zn-doped MnOx nanowires with abundant defects and tunable small cross-sections, exhibiting an outstanding specific capacitance. More specifically, based on a facile hydrothermal strategy, zinc sites could be uniformly dispersed in the α-MnOx nanowires structure as a function of composition (0.3, 2.1, 4.3, and 7.6 wt.% Zn). Such a process avoided the formation of different crystalline phases during the synthesis. The reproducible method afforded uniform nanowires, in which the size of cross-sections decreased with the increase of Zn composition. Surprisingly, we found a volcano-type relationship between the storage performance and the Zn loading. In this case, we demonstrated that the highest performance material could be achieved by incorporating 2.1 wt.% Zn, exhibiting a remarkable specific capacitance of 1082.2 F.g−1 at a charge/discharge current density of 1.0 A g−1 in a 2.0 mol L−1 KOH electrolyte. The optimized material also afforded improved results for hybrid supercapacitors. Thus, the results presented herein shed new insights into preparing defective and controlled nanomaterials by a simple one-step method for energy storage applications.

Publisher

Springer Science and Business Media LLC

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