Chemical Shift at Interface for Silicides
Author:
Affiliation:
1. National Institute of Materials Science
Publisher
Surface Analysis Society of Japan
Link
http://www.jstage.jst.go.jp/article/jsa/9/3/9_3_432/_pdf
Reference17 articles.
1. Vertical silicon metal–semiconductor–metal photodetectors with buried CoSi2 contact
2. Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices
3. Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system
4. Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications
5. Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
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