The study of ideal/defected graphene nanosheet roughness after atomic deposition process: Molecular dynamics simulation

Author:

Hoseini Sedigheh Bigom,Sabetvand Roozbeh

Abstract

In this work, molecular dynamics (MD) approach was performed to study the surface roughness of ideal/defected graphene nanosheet after carbon atoms deposition at various temperatures and pressures. In our calculations, the atomic interactions of nanostructures are based on TERSOFF and Lennard-Jones potential functions. The results show that the temperature of simulated structure is an important parameter in atomic deposition process and initial temperature enlarges, intensifies atomic deposition ratio. Numerically, by temperature increasing to 15 K, the surface roughness amplitude increase to 0.98 Å/0.83 Å after atomic deposition in ideal/defected structure. The roughness power in MD simulations converges to 0.64/0.55 in ideal/defected sample at maximum temperature. Furthermore, the pressure effects on dynamical behavior of simulated samples were reported in our study. We conclude that, by increasing initial pressure from 0 to 2 bar, the surface roughness amplitude in ideal/defected atomic arrangement increases to 1.01 Å/0.84 Å after deposition process and the roughness power of simulated structures reaches to larger value. Numerically, by initial pressure setting at 2 bar, the roughness power value converged to 0.72/0.56 in ideal/defected graphene. Reported numeric results in various temperature and pressures predicted the initial condition can be manipulated the atomic deposition process in ideal/defected graphene nanostructures.

Publisher

Academic Publishing Pte. Ltd.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3