Study of structural and morphological properties of RF-sputtered SnO<sub>2</sub> thin films and their effect on gas-sensing phenomenon-Reference-Cited by-同舟云学术

Study of structural and morphological properties of RF-sputtered SnO₂ thin films and their effect on gas-sensing phenomenon

Published:2023-01-01 Issue:1 Volume:16 Page:
ISSN:1178-5608
Container-title:International Journal on Smart Sensing and Intelligent Systems
language:en
Short-container-title:

Author:

Arora Ajay Kumar¹,Mahajan Sandeep²,Verma Maya³,Haridas Divya¹

Affiliation:

1. 1 Keshav Mahavidyalaya , University of Delhi , Delhi , India

2. 2 Centre of Materials for Electronic Technology (C-MET), Industrial Development Area (IDA) Phase-III, Cherlapally, Hindustan Cables Limited (HCL) (PO) , Hyderabad , India

3. 3 Hansraj College , University of Delhi , Delhi , India

Abstract

Abstract The present work focuses on understanding the impact of varying the thickness of SnO2 thin films on its gas-sensing response. Systematic studies were conducted by X-ray diffraction (XRD) and atomic force microscopy (AFM) on the structural and morphological properties of SnO2 thin films, which were thereafter correlated for a deeper understanding of the sensing phenomenon. The structural and morphological properties of SnO2 thin films were found to be highly dependent on the film thickness. The 90 nm SnO2 thin film exhibits the maximum sensing response to 200 ppm liquefied petroleum gas (LPG). A rough microstructure and the maximum surface-to-volume ratio of the 90 nm SnO2 thin film favors the gas-sensing response. It also possesses the smallest grain size, with the majority of crystallites oriented along the preferred (110) plane. The results suggest the possibility of utilizing the 90 nm SnO2 thin film as a base material, which can be further modified using a catalyst for the efficient detection of LPG gas in the future.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://www.sciendo.com/pdf/10.2478/ijssis-2023-0003

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