On the mechanism of electroluminescence emission by porous silicon layers-Reference-Cited by-同舟云学术

On the mechanism of electroluminescence emission by porous silicon layers

Published:2005-09-01 Issue:3 Volume:3 Page:470-481
ISSN:2391-5420
Container-title:Open Chemistry
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Author:

Velasco Jaime¹

Affiliation:

1. 1Facultad de Ciencias, Departamento de Química, Universidad Autónoma de Madrid, C-IX-503, 28049, Canloblanco, Madrid, Spain

Abstract

AbstractThe analytical treatment of a model considering the electrooxidation of p-porous silicon layers under galvanostatic conditions is able to give account of experimental facts such as the shape and location of the electroluminescence peak as well as of the spectral shift of the electroluminescence peak produced by oxidation. The proposed model considers electroluminescence to be the result of electron injection into the conduction band by an adsorbed intermediate produced by electrooxidation of the surface coverage with hydrogen or siloxene of the silicon nanocrystallites. The access of holes to the surface is made possible by low accumulation layer conditions and is the rate determining step in the electroluminescence mechanism. In this way it is possible to give a satisfactory explanation to the shift towards the blue experimented by the electroluminiscence emission maximum as a consequence of electrooxidation.

Publisher

Walter de Gruyter GmbH

Subject

Materials Chemistry,General Chemistry

Link

http://link.springer.com/content/pdf/10.2478/BF02479276.pdf

Reference11 articles.

1. L.T. Canham: “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers”, Appl. Phys. Lett., Vol. 57(10), (1990), pp. 1046–1048.

2. N. Koshida and H. Koyama: “Visible Electroluminescence from Porous Silicon”, Appl. Phys. Lett., Vol. 60(3), (1992), pp. 347–349.

3. V. Lehmann and U. Gösele: “Porous Silicon Formation. A Quantum Wire Effect”, Appl. Phys. Lett., Vol. 58(8), (1991), pp. 856–858.

4. A.G. Cullis and L.T. Canham: “Visible Light Emission due to Quantum Size Effects in Highly Porous Crystalline Silicon”, Nature, Vol. 353, (1991), pp. 335–338.

5. S. Gardelis, J.S. Rimmer, P. Dawson, B. Hamilton, R.A. Kubiak, T.E. Whall and E.H.C. Parker: “Evidence for Quantum Confinement in the Photoluminescence of Porous Si and SiGe”, Appl. Phys. Lett., Vol. 59(17), (1991), pp. 2118–2120.