Ohmic Contacts to p-GaN Using Au/Ni-Zn-O Metallization
Author:
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering
Link
https://www.degruyter.com/view/j/jee.2011.62.issue-5/v10187-011-0049-4/v10187-011-0049-4.pdf
Reference20 articles.
1. Very low resistance multilayer Ohmic contact to n‐GaN
2. Ohmic Contacts for Compound Semiconductors
3. Ohmic Contact to P-Type GaN
4. GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
5. Low resistance Ni–Zn solid solution/Pd ohmic contacts to p-type GaN
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2. Structural, optical, electrical properties, and strain/stress of electrochemically deposited highly doped ZnO layers and nanostructured ZnO antireflective coatings for cost-effective photovoltaic device technology;Thin Solid Films;2016-04
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